We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...

The ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼ ...

Significant opportunities exist for optical interconnections at the board, module, and chip level if compact, low-loss, high-data-rate optical interconnections can be integrated into these electrical interconnection systems. To create such an integrated optoelectronic/electronic microsystem, mask-based alignment of the optical interconnection waveguide, optoelectronic active devices, and interf...

Au-hole array and Au-GeSn grating structures were designed incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic are beneficial effective optical confinement near the surface due to plasmon resonance (SPR), contributing an responsivity. The responsivity enhancement Au hole-array structure is insensitive polarization direction, w...

─We present the design and simulation results of an integrated wavelength demultiplexer. The device’s major components, which include the Silicon-on-insulator (SOI) etched diffraction grating and waveguide integrated InP/InGaAs MSM photodetectors are discussed in detail. The Silicon-on-insulator diffraction grating is fabricated using standard CMOS processes. The photodetectors are integrated o...

Solution-processed organic–inorganic metal halide perovskites have recently attracted tremendous attention in the photodetector community due to their excellent optoelectronic properties and facile fabrication. The main challenge perovskite photodetectors (PSPDs) is achieve high responsivity fast speed simultaneously. In this work, overcome by employing a directly patterned nanograting methylam...