X-ray direct detectors based on hybrid lead-halide perovskite have seen a dramatic increase of interest in the last years. A rush for achievement high performing devices drives scientific community. In this context, several photoconductor sensors employ functional layers to gain effect, but full comprehension mechanism is still lacking. Here nanoanalysis used, performed by simultaneous acquisit...

For development of advanced materials, characterization using a scanning transmission electron microscope (STEM) including analysis via X-ray energy-dispersive spectrometry and electron energy-loss spectrometry is essential. Recent advances in aberration-corrected instruments have offered large-scale data acquisition at a high resolution for limited acquisition times both in imaging and in anal...

This article reviews progress in the application of electrophoretic techniques for the separation of nanoparticles. Numerous types of nanoparticles have recently been synthesised and integrated into different products and procedures. Consequently, analytical methods for the efficient characterisation of nanoparticles are now required. Several studies have revealed that gel electrophoresis can r...

In the present and future CMOS technology, due to the ever shrinking geometries of the electronic devices, the availability of techniques capable of performing a quantitative analysis of the relevant parameters (structural, chemical, mechanical) at a nanoscale is of a paramount importance. The influence of these features on the electrical performances of the nanodevices is a key issue for the n...

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New insights into the architecture and formation mechanisms of calcific lesions down to the nanoscale open a better understanding of atherosclerosis and its pathogenesis. Scanning electron - and atomic force microscope based nano-analytical characterization techniques were adapted to the assessment of an ex-vivo calcified coronary artery. Human atherosclerotic tissue and bone tissue reside a ty...

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.