Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to ...

Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-orga...

Nanoscale carbon-nanotube field-effect transistors (CNTFETs) have been a focus of recent studies in next-generation semiconductor architecture. However, in numerous CNTFETs that have been proposed, process variations, as well as measurement fluctuations, have occurred regularly, hampering the development of these devices for practical applications. Moreover, it is difficult to control the condu...

The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...

The interactions between electric field and the mechanical properties of materials are important for the applications of microelectromechanical and nanoelectromechanical systems, but relatively unexplored for nanoscale materials. Here, we observe an apparent correlation between the change of the fractured topography of Nb-doped SrTiO3 (Nb:STO) within the presence of a built-in electric field re...

We employ a novel multi-configurational selfconsistent Green’s function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio...

Nanostructured GaN materials, including nanowires and nanorods, are advantageous for nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the technological progress, there exist many issues be solved commercial applications. To realize nanostructured it is essential figure out thoroughly current transport mechanisms with regard contact size. Experimental the...

Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achi...

subject to in-plane uniaxial stresses and variable excitation O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, and J. Massies Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany Sch...

We report optical scanning measurements on photocurrent in individual Si nanowire field effect transistors (SiNW FETs). We observe increases in the conductance of more than 2 orders of magnitude and a large conductance polarization anisotropy of 0.8, making our SiNW FETs a polarization-sensitive, high-resolution light detector. In addition, scanning images of photocurrent at various biases reve...