In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

We report the fabrication of a three dimensional branched ZnO/Si heterojunction nanowire array by a two-step, wafer-scale, low-cost, solution etching/growth method and its use as photoelectrode in a photoelectrochemical cell for high efficiency solar powered water splitting. Specifically, we demonstrate that the branched nanowire heterojunction photoelectrode offers improved light absorption, i...

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass ...

The average inter-wire spacing in aligned nanowire systems strongly influences both the physical and transport properties of the bulk material. Because most studies assume that the nanowire coordination is constant, a model that provides an analytical relationship between the average inter-wire spacings and measurable physical properties, such as nanowire volume fraction, is necessary. Here we ...

Hydrothermally synthesized zinc oxide nanowire arrays have been used as nanostructured acceptors in emerging photovoltaic (PV) devices. The nanoscale dimensions of such arrays allow for enhanced charge extraction from PV active layers, but the device performance critically depends on the nanowire array pitch and alignment. In this study, we templated hydrothermally-grown ZnO nanowire arrays via...

We report a general method for reliably fabricating quasi-one-dimensional superconducting nanowire arrays, with good control over nanowire cross section and length, and with full compatibility with device processing methods. We investigate Nb nanowires with individual nanowire cross sectional areas that range from bulklike to 10 x 11 nm, and with lengths from 1 to 100 microm. Nanowire size effe...

Articles you may be interested in Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays Appl. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory Appl. ...

Thin metallic nanowires are highly promising candidates for plasmonic waveguides in photonic and electronic devices. We have observed that light from the end of a silver nanowire, following excitation of plasmons at the other end of the wire, is emitted in a cone of angles peaking at nominally 45-60 degrees from the nanowire axis, with virtually no light emitted along the direction of the nanow...

Direct tensile mechanical loading of an individual single-crystal BaTiO(3) nanowire was realized to reveal the direct piezoelectric effect in the nanowire. Periodic voltage generation from the nanowire was produced by a periodically varying tensile mechanical strain applied with a precision mechanical testing stage. The measured voltage generation from the nanowire was found to be directly prop...

Forming electrodes on opposite sides of an individual bismuth nanowire was attempted to prepare for Hall measurements. Although a 1-mm-long bismuth nanowire which is completely covered with a quartz template has been successfully fabricated to prevent oxidation, it is very difficult to attach Hall electrodes on the opposite sides of the nanowire due to the quartz covering. One side of the cylin...