نتایج جستجو برای: ni mn ga

تعداد نتایج: 120807  

Journal: :Nature materials 2009
Mehmet Acet

news & views Nevertheless, a few hurdles must be overcome before SBA dielectrics will make a significant impact on large-scale transistor manufacturing. Perhaps the biggest problem at the moment is the slow response of the sodium ions to an external electric field. Consequently, the capacitance of the SBA films is reduced at higher frequencies. Solid-polymer electrolytes typically suffer from a...

Journal: :Physica Status Solidi A-applications and Materials Science 2023

The influence of Cu doping on phase transition, thermal strain, and expansion property polycrystalline Ni 50 Mn 23− x Ga 27 ( = 1, 3, 5, 6 7) alloys is investigated. results show that with increasing concentration, martensitic transformation gradually gets close to Curie transition. A magnetostructural transition (MST) observed in samples 7. Such MST can enhance magnitude strain. Besides, posse...

2004
Marcelo Stipcich Lluís Mañosa Antoni Planes Michel Morin

We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in a...

2016
LeAnn E. Faidley Marcelo J. Dapino Gregory N. Washington Thomas A. Lograsso Ralph C. Smith

Ferromagnetic shape memory martensites in the Ni-Mn-Ga system have been demonstrated to achieve a number of the criteria required for next generation actuators including the production of large theoretical strains up to 6%. The large strain originates in the rotation of twin variants and associated twin boundary motion which occurs in response to magnetic fields. The magnetic activation holds p...

2002
P. G. Tello F. J. Castaño R. C. O’Handley S. M. Allen F. Castaño X. Batlle

Polycrystalline Ni–Mn–Ga thin films have been deposited by the pulsed laser deposition ~PLD! technique, using slices of a Ni–Mn–Ga single crystal as targets and onto Si ~100! substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1310 Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K...

Journal: :Journal of Magnetism and Magnetic Materials 2004

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