Full silicidation ~FUSI! of polysilicon gates promises to be a simple approach for formation of metal gate electrodes for highly scaled complementary metal oxide semiconductor ~CMOS! transistors. Devices have been reported with several different silicides, prominently with nickel. NiSi was shown to produce different work functions, covering a large portion of silicon bandgap, in relation to a d...

Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale. Here, we report efficient and unique methods, point and line contact reactions on Si nanowires, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale. By using the point contact...

The nisin gene cluster nisABTCIPR of Lactococcus lactis, located on a 10-kbp DNA fragment of the nisin-sucrose transposon Tn5276, was characterized. This fragment was previously shown to direct nisin-A biosynthesis and to contain the nisP and nisR genes, encoding a nisin leader peptidase and a positive regulator, respectively [van der Meer, J. R., Polman, J., Beerthuyzen, M. M., Siezen, R. J., ...

The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is observed that both diffusion and solubility are higher in δ-Ni2Si than NiSi. The redistribution of B during Ni silicidation is also studied. The SIMS profiles show the presence of concentration step in the middle of the final NiSi layer. This profile shape is explained in light of the results obtain...

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-p...

Lattice thermal conductivity of solid solutions based on cobalt monosilicide and monogermanide was studied. Electrical conductivities CoSi CoGe x Si 1-x (x=0.03 0.07) were experimentally measured in the temperature range 80-350 K. Phonon spectra calculated using ab initio lattice dynamics. The results calculations are good agreement with measurements obtained present work literature data. It sh...

To measure the transmittance of drinking water, 2W LED light, Theremion_Spectrometer and diffraction grating are used. The research area is Nisi located inBaglung district, Nepal. observation taken 9 sample water from different sources Nisi. shows that thetransmittance Kanabazer, Jiba Khola, Jiri, Jajir, Khahare Bhalu Khola high. In addition, absorbanceof Khar Chowar higher than other. ranges 3...

NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal– oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperatu...

" Scire est nescire, nisi id me Scire alius scierit." JANUARY, I925.