An alternative, subcritical-temperature austenitic nitriding process is evaluated in this paper with the purpose of accelerating the treatment cycle, optimizing the hardness gradient in nitrided layers and seeking improved process control. Comparing to the conventional nitriding processed at ferritic temperature and followed by slow cooling, the alternative process includes nitriding at elevate...

In this report, a diffusion analysis has been extended to a lattice containing two interstitial sites, and the results obtained are used to understand: ~1! the formation of a nitrided/unnitrided N configuration for intermediate N content and ~2! the abnormally small ~apparent! diffusion frequency factor, both of which characterize the newly developed R2Fe17 nitrides. It turns out that the diffu...

- The mechanism of diffusion layer growth in plasma nitrided coatings applied on a St52 steel using an active screen is investigated. The nitriding was performed at 450,500 and 550 ◦C temperature nitriding times of 5, 10 and 15 h, in a gas mixture containing 20 vol. % H2: 80 vol. % N2 and DC-pulsed plasma nitriding unit. The surface, cross section and the thickness of diffusion of specimens ...

Boreal forest and tundra are the major ecosystems in the northern high latitudes in which a large amount of carbon is stored. These ecosystems are nitrogen-limited due to slow mineralization rate of the soil organic nitrogen. Recently, abundant field studies have found that organic nitrogen is another important nitrogen supply for boreal forest and tundra ecosystems. In this study, we incorpora...

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than ...

The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ∼70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a ...