In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that t...

Since the original classification of diamonds based upon their absorption in the one-phonon region of the mid-infrared (IR) range was first introduced, a vast amount of research has been carried out in this field. The result today is that IR analysis has become the principle tool for classifying diamonds based upon the concentration and aggregation state of nitrogen, the most common impurity fo...

This study discussed the effect of oxygen impurity in inlet gas a nitrogen atmospheric pressure plasma jet (APPJ). A numerical model that takes into account fluid dynamics, heat transfer, mass diffusion, and chemical reactions was developed to simulate APPJ. Further, DC APPJ experiment performed verify temperature characteristics on treated surface. The decreased with an increase impurity. More...

We present the results of first principles molecular dynamics simulations of nitrogen vacancy complexes in monolayer hexagonal boron nitride. The threshold for local structure reconstruction is found to be sensitive to the presence of a substitutional carbon impurity. We show that activated nitrogen dynamics triggers the annihilation of defects in the layer through formation of Stone-Wales-type...

Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely rel...