The surfaces of all metals (except for gold) in air are covered with oxide films. When such a metal is immersed in an aqueous solution, the oxide film tends to dissolve. If the solution is acidic, the oxide film may dissolve completely leaving a bare metal surface, which is said to be in the active state. In near-neutral solutions, the solubility of the oxide will be much lower than in acid sol...

The surfaces of all metals (except for gold) in air are covered with oxide films. When such a metal is immersed in an aqueous solution, the oxide film tends to dissolve. If the solution is acidic, the oxide film may dissolve completely leaving a bare metal surface, which is said to be in the active state. In near-neutral solutions, the solubility of the oxide will be much lower than in acid sol...

Oxidation behavior of AZ91D magnesium alloy with 3YSZ coating and aluminum interlayer was studied in air at 250 °C using electrochemical impedance spectroscopy EIS, scanning electron microscopy SEM, and X-ray diffraction XRD. The oxidation process was carried out in various duration times from 1 to 10 h. A three-electrode electrochemical cell was employed for all the EIS measurements. Also, to ...

tungsten trioxide (wo3) films have been coated on indium thin oxide (ito) conductive glass substrate, using aqueous solution of peroxotungstic acid (pta) by the sol-gel dip coating method. x-ray diffractometery (xrd) analysis confirmed monoclinic and triclinic structure for the film and powdered wo3 respectively. fourier transforms infrared spectroscopy (ft-ir) exhibited the structure of peroxo...

The synthesis of nickel oxide nanoparticles in film form using dead biomass of the filamentous fungus Aspergillus aculeatus as reducing agent represents an environmentally friendly nanotechnological innovation. The optimal conditions and the capacity of dead biomass to uptake and produce nanoparticles were evaluated by analyzing the biosorption of nickel by the fungus. The structural characteri...

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from fluorocarbon film growth on the SiO2 to an...

The ellipsometric film thickness measurement precision for equivalent oxide thickness as prescribed by the International Technology Roadmap for Semiconductors is quite high. Although short-term precision on a single ellipsometric instrument can be quite high, deviations of measured film thickness from instrument-to-instrument and from lab-to-lab for short-term and long-term periods of time need...