A technique was developed to deposit GaN on a Si(1 1 1) substrate by a four-step process in a single reactor: formation of ultra-thin oxide, conversion to an oxynitride via NH3 exposure at the onset of growth, low-temperature MOCVD of GaN, followed by HVPE of GaN. It was found that this oxynitride compliant layer served to relieve stress at the GaN/Si interface as well as protect the Si substra...

The continuous demand for improved CMOS transistors necessitate smailer device dimensions. The reduction in chip size into the deep sub-micron dimensions opens up new scientific and engineering challenges. One of the most critical material in developing deep sub-micron MOS transistors is high quality ultrathin (a few nm) gate dielectric film. As the gate dielectric thickness is reduced to below...

3D solid-state batteries are receiving great attentions as on-board power supply systems for small-dimension devices, due to their high power and energy densities. However, the fabrication of 3D solid-state batteries has been a formidable challenge due to the limitation of conventional thin-film techniques. Recently, atomic layer deposition (ALD) has emerged as a powerful approach toward 3D sol...

Inversion-layer mobility in MOSFETs is quantitatively examined by taking MOSFETs with oxynitride and ultra-thin gate oxides as examples. It was shown that additional Coulomb scattering due to charged impurities in poly-Si gate and due to fixed charges in oxynitride gate oxides is responsible for the mobility degradation in low effective electric field region for ultra-thin gate oxides and oxyni...

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such...