An architecture in which nand p-type materials alternate laterally in the active ®lm of a device with a spatial period of about a carrier di€usion length would lead to ecient (opto)electronic devices for photovoltaic energy conversion and switching, among others. Such an architecture, although dicult to achieve with conventional silicon-based schemes, is within reach using semiconductor nanoc...

The simplest semiconductor junction that is used in solar cells for separating photogenerated charge carriers is the p-n junction, an interface between the p-type region and ntype region of one semiconductor. Therefore, the basic semiconductor property of a material, the possibility to vary its conductivity by doping, has to be demonstrated first before the material can be considered as a suita...

Directional crystallization from the melt has been used as a tool to grow parallel crystalline stripes of p- and n-type molecular semiconductors. To start, phase behavior 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8): tetracyanoquinodimethane (TCNQ) blends (molar ratio 20:1 1:1) investigated by variable-temperature X-ray diffraction, differential scanning calorimetry, polarized...

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such a...

Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive f...