Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...

Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfl...

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer dep...

Polydimethyl siloxane (PDMS)–glass microchip has a very strong surface effect on polymerase chain reaction (PCR), leading to a very poor PCR yield. In the work reported here, practical dynamic passivation of surfaces of PDMS–glass microchip using polyethylene glycol (PEG) or polyvinylpyrrolidone (PVP) was achieved using a conventional thermocycler. The passivation procedure was cost-effective a...

The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of pand n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ul...

This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 lm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 · 100 lm), and eight fingers ones (W = 8 · 125 lm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals so...

In this paper, passivity and passivation problems for event-triggered feedback interconnected systems are addressed. We consider passivity in two event-triggered control schemes based on the location of the event-triggered samplers: sampler at plant output and sampler at controller output. For both schemes, we first derive the conditions to characterize the level of passivity for the interconne...

A Cr adhesion layer inserted between Ag nanoparticles and a glass substrate, for the purpose of improving the adhesion of Ag nanoparticles to glass, was observed to cause an abnormal peak shift of extinction spectra in nonspecific reactions. The undesired peak shift misleads molecule detection in non-specific reactions. To solve this issue, a practical technique using n-propyl-trimethoxysilane-...

The objectives were to analyze the oxide layer generated between titanium and porcelain during firing and compare it in different manufacturing techniques: cast, milled and EBM-technique. Seventy two specimens were manufactured, subdivided according to surface treatment: time of passivation (P) and no time of passivation (NP) before porcelain firing. Specimens from each group were analyzed with...