The principal object of this paper is to develop a neural network model, which can simulate the plasma enhanced chemical vapor deposition (PECVD) process in TFT-Array procedure. Then the Boolean logic rules are extracted from the trained neural network in order to establish a knowledge base of expert system. The input data of neural network was collected form the process parameters of PECVD mac...

An in situ Modulated Photoluminescence (MPL) measurement setup mounted on a Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor is described. A method for deriving the actual minority carrier lifetime at specific injection level of 1.1015 cm−3 presented. This tool was used case study to monitor passivation properties aluminum oxide (AlOx) thin films upon annealing. Interesting kinetics, s...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 Å plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 250oC. Five PECVD process parameters are designed to lower the refractive index and ...

The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...

The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...

Insights into the growth of high edge density carbon nanostructures were achieved by a systematic parametric study of plasma-enhanced chemical vapor deposition (PECVD). Such structures are important for electrode performance in a variety of applications such as supercapacitors, neural stimulation, and electrocatalysis. A morphological trend was observed as a function of temperature whereby grap...

the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

The present work reports results of an effort to produce a stack multilayer optical filter on a poly(ethylene terephtalate) (PET) substrate, using a PECVD technique. Titanium dioxide type of material (n550 = 2.3) has been selected for high refractive index layers while that of silicon dioxide type (n550 = 1.4) served as low refractive index films. For a synthesis of the former material, titaniu...

Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...