Single photon ionization of C60 in 2,2-dimethylpropane (neopentane, NP), 2,2,4,4-tetramethylpentane (TMP), 2,2-dimethylbutane (neohexane, DMB), and 2,2,4-trimethylpentane (isooctane, isoOCT), and of C70 in TMP was studied by photoconductivity measurement. Threshold energies of the photoconductivity were determined. From these results, the polarization energies and the ionic radii of the cations...

A giant persistent photoconductivity (PPC) phenomenon has been observed in vacuum condition based on a single WO3 nanowire and presents some interesting results in the experiments. With the decay time lasting for 1 × 10(4) s, no obvious current change can be found in vacuum, and a decreasing current can be only observed in air condition. When the WO3 nanowires were coated with 200 nm SiO2 layer...

The absorption properties of charge transfer organic semiconductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on KBr singlecrystal, quartz and glass substrates in far infrared have been investigated. An absorption edge at ?10 ??m was observed. Photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. The results show an el...

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-expone...

We have investigated the microwave-detected photoconductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films a...

Persistent photoconductivity effects have been characterized in n-type Al0.15Ga0.85N/GaN heterostructures using both monochromatic light and room light illumination. Time constants of ;1310 s have been observed, and measurements of photocurrent specta performed using various illumination geometries and techniques have shown that defect levels exist in both the Al0.15Ga0.85N and GaN layers. Broa...

Terahertz photoconductivity in heterostructures based on n-type Hg1−xCdxTe epitaxial films both in the topological phase (x < 0.16, inverted band structure, zero band gap) and the trivial state (x > 0.16, normal band structure) has been studied. We show that both the positive photoresponse in films with x < 0.16 and the negative photoconductivity in samples with x > 0.16 have no low-energy thre...

In this paper we report, for the first time, the alignment enhanced photoconductivity of single wall carbon nanotube films upon laser illumination. The photoconductivity exhibited an increase, decrease or even 'negative' values when the laser spot was on different positions between contact electrodes, showing a 'position' dependent photoconductivity of partially aligned films of carbon nanotube...

Dopant-to-host electron transfer is calculated using ab initio wavefunction-based embedded cluster methods for Yb/Ca pairs in CaF2 and Yb/Sr pairs in SrF2 crystals to investigate the mechanism of photoconductivity. The results show that, in these crystals, dopant-to-host electron transfer is a two-photon process mediated by the 4f(N-1)5d excited states of Y b(2+): these are reached by the first...

Based on the study of photoconductivity in GaAs / AlAs p-i-n heterostructures visible light range, dominant role diffusion channel photoexcited electrons from heavily doped layers formation photocurrent oscillations bias voltage and determining contribution this to total current through structure is shown. A qualitative model transport excited carriers considered, which assumes as main source p...