Porous Silicon (PS) has found its broad application for optoelectronics devices specially solar cells applications due to its efficient antireflection coating. This material has advantages such as broaden band gap, wide absorption spectrum and high optical transmission range from 700-1000nm. In this paper, the experimental study of electrochemically prepared porous silicon structures is present...

this study presents the electric behavior of sandwich devices based on porous silicon (ps) thin films with au/ps/si/cu structure when the material’s surface is exposed to different gases. ps thin films were fabricated by the electrochemical anodization method of si–c (100) substrates with resistivity 1.4-2.6 ωcm. samples were anodized in a solution of hf (48%), c2h5oh (99.98%) and distilled wat...

self-assembly of densely packed zno nanorods were grown on porous silicon (ps) substrate by low-temperature chemical bath deposition. the structural and optical properties of the obtained zno nanostructures on ps substrate were systematically studied. the strong and sharp (002) peak compared with other peaks in the x-ray diffraction (xrd) indicated thatzno nanorods formed with superior orientat...

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

Porous silicon (PS) substrates, with different pore sizes and morphology, have been used to crystallize hydroxyapatite (HA) nano-fibers by an easy and economical procedure using a co-precipitation method at room temperature. In situ formation of HA nanoparticles, within the meso- and macroporous silicon structure, resulted in the formation of nanometer-sized hydroxyapatite crystals on/within th...

Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial–parallel capacitance structure. Agreement between modeling ...

We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics and photosensitivity spectra indicate that for structures with a thin PS layer the photosensitivity is determined by PS/c-Si heterojunctions (HJ), wh...

Desorption/ionization on porous silicon-mass spectrometry (DIOS-MS) is a novel soft ionization MS technique that does not require any matrix reagent, ideally resulting in fewer obstructive peaks in the lower mass region. In this study, the etching conditions of porous silicon spots as an ionization platform of DIOS-MS were investigated for determining the molecular weight distribution (MWD) of ...

In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS-RGO structure was confirmed. By means of current-voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS-RGO structure...