A recent study on post-superplastic forming properties has shown that heating time prior to testing has a major effect on the post-forming properties of superplastically-formed AZ31 Magnesium alloy sheets. To this point, there has been very little examination into the effects of pre-heating or annealing on superplastic forming. In this work, these effects are examined using AZ31 Mg alloy sample...

In the present work, ZnO/CuO composite nanostructures have been grown on uorine doped tin oxide coated glass substrate by aqueous chemical growth method. To observe the e ect of post growth annealing (500 ◦C, 1 min) on the structural properties of ZnO nanorods scanning electron microscope and X-ray di raction techniques have been utilized. SEM images of post growth annealed (post growth anneale...

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic sub...

In this study, we first investigated changes seen in electrical and optical properties of a polymer light-emitting diode due to using different kinds of solvents and their mixture. Two-layer light emitting diodes with organic small molecules doped in a PVK polymer host were fabricated using (i) non-aromatic solvent chloroform with a high evaporation rate; (ii) aromatic solvent chlorobenzene wit...

We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We concl...

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700 ° C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . ...

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from 10 to 10 cm 3 by post-deposition annealing in oxygen at temperatures from 200 C to 290 C. In the case of Zn(O,S) with S/Zn1⁄4 0.37, despite the considerable change in the ele...

Functional energy storage and return prosthetic and orthotic devices have been manufactured out of Nylon 11 using selective laser sintering due to its high ductility and energy return properties. However, there is concern that material voids caused by incomplete sintering may compromise material properties and lead to premature fracture. Post-build annealing has the potential to eliminate voids...