نتایج جستجو برای: qws
تعداد نتایج: 319 فیلتر نتایج به سال:
AIMS Glucagon-like peptide-1 receptor agonists and dipeptidyl peptidase-4 inhibitors treat type 2 diabetes through incretin-signaling pathways. This study compared the efficacy and safety of the glucagon-like peptide-1 receptor agonist exenatide once-weekly (Miglyol) suspension for autoinjection (QWS-AI) with the dipeptidyl peptidase-4 inhibitor sitagliptin or placebo. MATERIALS AND METHODS I...
Strained quantum wells (QWs) grown along the polar axis (1 11) in a zincblende semiconductor exhibit a piezoelectric field. This field strongly modifies the energy of excitons confined in QWs. We have extracted, from optical measurements of excitonic transitions, the piezoelectric field value in a large set of QWs: CdTdCdZnTe, CdTeICdMnTe, CdZnTeICdMnTe. By suitably choosing the composition of ...
For the first time, we demonstrated intense ultraviolet (UV) emission at 230–350 nm from III-nitride compound semiconductors grown by metalorganic vapor phase epitaxy (MOVPE). First, we obtained 230 nm-band intense UV emission from AlN/AlxGa1−xN quantum wells (QWs) at 77K. The emission efficiency of AlGaN-based QWs was as high as that of blue light-emitting diodes (LEDs) at low temperature, how...
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The generates a strong piezoelectric field in QWs that contributes THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect strength of result emission. Experimental pump fluence, laser energy, excitation power, pol...
We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. This mode demonstrates a super-linear dependence ...
We report an electron spin resonance (ESR) study in n-type narrow-gap quantum well (QW) heterostructures. By using the Hartree-Fock approximation based on the 8 k·p Hamiltonian the many-body theory of the ESR in narrow-gap QWs is developed. We have discovered significant enhancement of the ESR g-factor and its low-magnetic-field divergence in both in asymmetric and symmetric QWs which is caused...
Quantum walks (QWs) exhibit different properties compared with classical random (RWs), most notably by linear spreading and localization. In the meantime, that replicate quantum walks, which we refer to as quantum-walk-replicating (QWRWs), have been studied in literature where eventual of QWRW coincide those QWs. However, consider unique attributes QWRWs not fully utilized former studies obtain...
Nonpolar and semipolar III–nitride quantum wells (QWs) and devices have been extensively studied due to their unique valence band (VB) structure and polarized optical emission. Unlike conventional c-plane oriented III–nitride QWs, the low crystal symmetry and unbalanced biaxial stress in nonpolar and semipolar QWs separates the topmost VBs and gives rise to polarized optical emission. Since the...
Staggered InGaN quantum wells QWs are analyzed as improved gain media for laser diodes LDs lasing at 440 and 500 nm. The calculation of band structure is based on a 6-band k ·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function...
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