An accurate value for the radiative lifetime of the 2s 2p~(~P) 3s ~P~ level in N II has been obtained using the beam-foil-laser spectroscopy method. The result (T = 0.456 ± 0.020 ns ) is shorter than the beam-foil lifetime values reported previously for the 3s' ~P term. No theoretical value for the lifetime of this term is available at the present time.

A new type of ion trap is used to measure the radiative lifetime of the NO(a S) metastable state. The ion trap is designed to store ion beams with an energy of a few keV and is well suited for the study of metastable states. The measured value for the radiative lifetime is tr5760630 ms, in good agreement with the last experimental values of Calamai and Yoshino @J. Chem. Phys. 101, 9480 ~1994!#,...

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

In a previous PRL, the authors found quantitative evidence that, despite hexagonal boron nitride ($h$-BN) having an indirect band gap, luminescence efficiency of high-quality crystals reaches level best direct semiconductors. Here, thanks to breakthrough experiments performed using original time-resolved cathodoluminescence setup, address root cause high quantum yield efficiency. These results ...

The lifetime of the b Pu(v51) state in N2 has been determined experimentally using a laser-based pump–probe scheme and an exceptionally long lifetime of 2.61 ns was found. Semiempirical close-coupling calculations of the radiative lifetime, which include Rydberg–valence interactions in the singlet manifold, are consistent with this large value, giving a value of 3.61 ns and suggesting a prediss...