We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm.

Reported for the first time is picosecond-range pulse generation in an all-fibre Raman laser based on P₂O₅-doped silica fibre. Employment of phosphor-silicate fibre made possible single-cascade spectral transformation of pumping pulses at 1084 nm into 270-ps long Raman laser pulses at 1270 nm. The highest observed fraction of the Stokes component radiation at 1270 nm in the total output of the ...

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, t...

We found conditions for excitation of bright-bright 2pi solitons in stimulated Raman scattering that involves nutation of population at Raman quantum levels, for two (laser-Stokes) and three (e.g., laser-Stokes-anti-Stokes) components. The soliton components at all participating frequencies are bright solitons of the same, Lorentzian, shape, in contrast to the well-known bright-dark soliton com...

A crystalline Raman laser is pumped at 90° to the Raman laser axis by a single pass from a line-focused 532 nm pump laser of pulse duration 10 ns. The Raman laser threshold was 6.1 mJ, and at 12 mJ pump energy, a maximum output energy of 2.7 mJ was obtained with a slope efficiency of 46%. The threshold pump intensity is within a factor of 2 of the same device when end-pumped. The results highli...

The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.3 W with an optical conversion efficiency of 3.4% with respect to the absorbed diode pump power. Narrow Stokes emission (FWHM <0.1 nm) was attained using etalons to limit the fundamental spectrum t...

We present the efficient frequency conversion of sub-100-fs visible laser pulses by delayed four-wave Raman mixing. Control of intensity distribution and polarization of rotational Raman sidebands is demonstrated by changing the polarization of pump and probe laser pulses. The mechanism of the rotational Raman sideband generation is investigated. It can be explained by angular momentum conserva...

We demonstrate a silicon Raman laser and report observation of simultaneous lasing at 1675 nm and parametric Raman emission at 1540 nm. The laser is pumped with 1540 nm pulses and has a threshold at 9W peak pulse power.

We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.