نتایج جستجو برای: random access storage

تعداد نتایج: 760270  

2014
Yi Ou Lei Chen Jianliang Xu Theo Härder

PCM can be used to overcome the capacity limit and energy issues of conventional DRAM-based main memory. This paper explores how the database buffer manager can deal with the write endurance problem, which is unique to PCM-based buffer pools and not considered by conventional buffer algorithms. We introduce a range of novel buffer algorithms addressing this problem, called wear-aware buffer alg...

2009

In this paper we examine a 2-level memory system that uses emerging nonvolatile RAM (NVRAM) technologies to build a main memory system with DRAM acting like a cache. We discuss the architectural aspects of such a structure including power-performance tradeoff and how compressed NVRAM storage can help. The analysis indicates that the power benefits of using emerging NVRAM technologies can be ver...

2014
Rajni Sharma Sanjay Chopade

ABSTRACT: SRAM area is expected to exceed 90% of overall chip area because of the demand for higher performance, lower power, and higher integration. To increase memory density, memory bitcells are scaled to reduce their area by 50% each technology node. High density SRAM bitcells use the smallest devices in a technology, making SRAM more vulnerable for variations. This variation effect the sta...

1996
Daniel Alexander Ford Jussi Myllymaki

We present the design of a log-structured tertiary storage system (LTS). The advantage of this approach is that it allows the system to hide the details of jukebox robotics and media characteristics behind a uniform, random access, block-oriented interface. It also allows the system to avoid media mount operations for writes, giving write performance similar to that of secondary storage.

2015
Arijit Bishnu Amit Chakrabarti Subhas C. Nandy Sandeep Sen

In this paper, we study the maximum density, threshold and emptiness queries for intervals in the streaming model. The input is a stream S of n points in the real line R and a floating closed interval W of width α. The specific problems we consider in this paper are as follows. Maximum density: find a placement of W in R containing the maximum number of points of S. Threshold query: find a plac...

2004
Guido D. Meier Alexander Thieme

The study of micromagnetism is a very active field of research with prospective applications in microelectronics, harddisk data storage as well as non-volatile random access memory. In recent years, the use of simulation tools has become one predominant factor in the rapid development of new devices as well as in the deepened understanding of underlying physical principles. To bridge the gap be...

2013
Fei Zhuge Bing Fu Hongtao Cao

Memory devices are a prerequisite for today’s information technology. In general, two dif‐ ferent segments can be distinguished. Random access type memories are based on semicon‐ ductor technology. These can be divided into static random access memories (SRAM) and dynamic random access memories (DRAM). In the following, only DRAM will be consid‐ ered, because it is the main RAM technology for s...

Journal: :IJDATS 2014
Madjid Tavana Dawn A. Trevisani Thomas A. Clark

Abstract: Military command and control (C2) systems are increasingly challenged by a host of modern problems, namely, internal vulnerabilities and external threats. Several approaches have been suggested in the literature to measure availability and integrity in C2 systems. Despite the importance of developing and maintaining self-protecting and self-healing processes, the simultaneous consider...

Journal: :IJCAET 2016
Sparsh Mittal

The demands of larger memory capacity in high-performance computing systems have motivated the researchers to explore alternatives of DRAM (dynamic random access memory). Since PCM (phase change memory) provides high-density, good scalability and non-volatile data storage, it has received significant amount of attention in recent years. A crucial bottleneck in wide-spread adoption of PCM, howev...

1994
Ambuj Shatdal Chander Kant Jeffrey F. Naughton

The current main memory (DRAM) access speeds lag far behind CPU speeds. Cache memory, made of static RAM, is being used in today’s architectures to bridge this gap. It provides access latencies of 2-4 processor cycles, in contrast to main memory which requires 15-25 cycles. Therefore, the performance of the CPU depends upon how well the cache can be utilized. We show that there are significant ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید