نتایج جستجو برای: rapid thermal annealing
تعداد نتایج: 537532 فیلتر نتایج به سال:
The effects of Ba content on the dynamics of the crystallization process, which ultimately determines the grain size, were studied in barium ferrite thin films. Rapid thermal annealing was used to crystallize the amorphous as-deposited barium ferrite films. The annealing time and temperature dependent crystalline volumes were determined from the magnetization of the films, and were analyzed by ...
Post-deposition rapid thermal annealing (RTA) was performed on the Cr-less Co20at%Pt alloy with a Mn diffusion layer on top. A value of about 8 10 erg/cm3 was obtained for the as-deposited film and it decreased only up to about 10% after annealing. The high intergranular exchange coupling of the as-deposited CoPt film was suppressed by RTA and the coercivity increased dramatically from about 22...
The effects of Zn doping in the substrate on the thermal stability of GaAsyAl Ga As single quantum well are investigated 0.24 0.76 by 900 8C rapid thermal annealing and low-temperature (12 K) photoluminescence measurements. An improvement in thermal stability is demonstrated for structures grown on Zn-doped GaAs in comparison with those grown on semi-insulating and Sidoped GaAs substrates. It i...
An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film is applied followed by a dry etching process. Size-dependent optical properties of the antireflective SiC structures have been investigated. It is found that the surface reflection of SiC in the visibl...
Modification of chemical order in epitaxial FePt binary alloy thin films deposited on MgO 100 substrates was induced and investigated in real time using x-ray rapid thermal annealing XRTA . This is possible because synchrotron undulator radiation has sufficient power density to induce significant structural modifications in thin films and its energy can be tuned to optimize absorption in the sa...
High-power arc lamp design has enabled ultrahigh-temperature sUHTd annealing as an alternative to conventional rapid thermal processing sRTPd for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction...
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