A bandgap reference circuit that uses high-voltage drainextended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18μm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD var...

This paper proposes a low-current reference circuit for power-aware LSI applications. The circuit consists of two current generation subcircuits which are based on β-multiplier circuit, one with a positive and the other with a negative temperature coefficient. The variation of the reference current in a sample circuit designed to produce a current of 230 nA can be kept very small within ±1.3% i...

Fig. 1. Schematic of the proposed current reference circuit. Intelligent network systems for the future will require a great number of smart sensor LSIs that measure various physical data in surroundings. These LSIs have to operate with a low power, tens of microwatts or less, because they will probably be placed in non-ideal environments where energy for operation cannot be obtained sufficient...

A low voltage switched-capacitor circuit that generates an almost constant reference current across process, voltage and temperature (PVT) is proposed. The reference voltage is generated by a low voltage band-gap circuit. The output reference current is obtained by applying the generated reference voltage to a low voltage V – I converter. The resistor in the proposed V – I converter is further ...

We all know that the basic building block of any communication system is the reference voltage generator. The objective of reference generation is to establish a DC voltage or current that is independent of the supply and process and has a well-defined behavior with temperature. Band Gap Reference (BGR) is one of the most popular reference generators. In the conventional BGR circuit, the refere...

This paper proposes a low voltage CMOS Nano power current reference circuit and presents its performance with circuit simulation in 180nm UMC CMOS technology. The proposed circuit consists of start-up, Bias-voltage, currentsource sub-circuits with most of the MOSFETs operating in sub-threshold region. Simulation results shows that the circuit generates a stable reference current of 4-nA in supp...

This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 μm CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27C with a temperature coefficient of 28.4 ppm/C in the range of -20 to +120C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 d...

A precision CMOS voltage reference circuit is very important for the design of the stable voltage down converter of the high density VLSIs. By using the active mode operation of the component MOS transistors a CMOS bandgap type reference voltage circuit was redesigned for the enhancement of the circuit stability against the internal noises. The voltage supply independence, temperature independe...

A bandgap reference (BGR) and sub1V BGR circuits for Picowatt LSIs is proposed here. The circuits pertains pico-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The circuits neglect resistors and contain only MOSFETs and one bipolar transistor. As the sub-BGR circuit divides the output voltage of the bipolar transistor ...

The current paper presents an improved bandgap voltage reference (BGR) that utilizes curvature-corrected current generators which compensate for the voltage reference at lower and higher temperature range. The voltage reference is operated with a supply voltage of 2.5V to achieve an output reference of 1.1835V. The temperature coefficient achieved from the circuit is 1.342 ppm/◦C, resulting fro...