نتایج جستجو برای: resistor

تعداد نتایج: 2706  

2013
P. J. Jones J. A. M. Huhtamäki J. Salmilehto K. Y. Tan M. Möttönen

We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in...

2004
Yoshifumi NISHIO Shinsaku MORI Akio USHIDA

In this study, we propose two types of coupled oscillators networks and investigate their steady states. One network has two-dimensional honeycomb structure. The other network has twedimensional lattice structure. In the Honeycomb circuit, adjacent three oscillators are coupled by one coupling resistor and it is considered that the voltages of three oscillators around a coupling resistor make t...

2003
Shinichi Hori Tadashi Maeda Hitoshi Yano Noriaki Matsuno Keiichi Numata Nobuhide Yoshida Yuji Takahashi Tomoyuki Yamase Robert Walkington Hikaru Hida

This paper describes a new widely tunable transconductor that can realize a channel-select filter having both of these characteristics. The transconductor includes a new negative source degeneration resistor. The paper also discusses the measured results obtained for the 6-order elliptic LPF adopting this new circuit. We propose a new negative source degeneration resistor (NSDR) transconductor ...

Journal: :IEICE Transactions 2009
Apisak Worapishet Phanumas Khumsat

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...

2013
Sezai Alper TEKİN Hamdi ERCAN Mustafa ALÇI

In this paper, a low voltage CMOS current controlled floating resistor which is convenient for integrated circuit implementation is designed by using differential pair. The proposed resistor has a simple circuit structure and low power dissipation. This circuit is required ±0.75 V as a power supply. The basic advantages of this circuit are wide tuning range of the resistance value, satisfied fr...

2014
Ayumu Matani Masaaki Nakayama Mayumi Watanabe Yoshikazu Furuyama Atsushi Hotta Shotaro Hoshino

Electric brain stimulations such as transcranial direct current stimulation (tDCS), transcranial random noise stimulation (tRNS), and transcranial alternating current stimulation (tACS) electrophysiologically modulate brain activity and as a result sometimes modulate behavioral performances. These stimulations can be viewed from an engineering standpoint as involving an artificial electric sour...

2015
Pascal Niklaus Gian Ulli Tobias Langner Jochen Seidel

In this group thesis, we develop an algorithm that allows the automated classification of resistors using image recognition. The algorithm is implemented in an Android app and therefore usable on every Android smartphone. The problem is split into parts and the result is obtained step by step beginning with the localization of the resistor in the captured image and cropping the image such that ...

Journal: :Physical review. E, Statistical, nonlinear, and soft matter physics 2013
Valeriy A Slipko Yuriy V Pershin Massimiliano Di Ventra

Can we change the average state of a resistor by simply applying white noise? We show that the answer to this question is positive if the resistor has memory of its past dynamics (a memristive system). We also prove that, if the memory arises only from the charge flowing through the resistor-an ideal memristor-then the current flowing through such memristor cannot charge a capacitor connected i...

Journal: :Physical review letters 1995
Lust Kakalios

Conductance fluctuations in hydrogenated amorphous silicon (a-Si:H) are simulated using a dynamical model of resistor diffusion on a lattice held at the percolation threshold. A fraction of lattice sites is designated as a trap, such that when a resistor diffuses onto that site it remains localized for a finite period of time. When a distribution of traps based on the defect density of a-Si:H i...

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