نتایج جستجو برای: rf sputtering

تعداد نتایج: 40854  

1999
S. Desa A. Kozak D. W. Zou X. Zhou J. F. Groves H. N. G. Wadley

This article describes the development of an integrated physical model for the rf diode sputtering of metal thin films. The model consists of: ~1! a computational fluid dynamic finite element model for the velocity and pressure distribution of the working gas Ar flow in the chamber, ~2! a steady-state plasma model for the flux and energy of Ar ions striking the target and the substrate, ~3! a m...

Journal: :Materials science & engineering. C, Materials for biological applications 2015
A R Boyd L Rutledge L D Randolph B J Meenan

The bioactivity of hydroxyapatite (HA) coatings can be modified by the addition of different ions, such as silicon (Si), lithium (Li), magnesium (Mg), zinc (Zn) or strontium (Sr) into the HA lattice. Of the ions listed here, strontium substituted hydroxyapatite (SrHA) coatings have received a lot of interest recently as Sr has been shown to promote osteoblast proliferation and differentiation, ...

2017
Sergey V. Ketov Rastko Joksimovic Guoqiang Xie Artem Trifonov Kazue Kurihara Dmitri V. Louzguine-Luzgin

Morphology evolution of the multicomponent metallic glass film obtained by radio frequency (RF) magnetron sputtering was investigated in the present work. Two modes of metallic glass sputtering were distinguished: smooth film mode and clustered film mode. The sputtering parameters, which have the most influence on the sputtering modes, were determined. As a result, amorphous Ni-Nb thin films wi...

Journal: :Inorganic chemistry 2011
Inseok Seo Steve W Martin

In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the melt-quenched starting materials in the nLi(2)S + GeS(2) (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown...

2014
J. He J. C. Jiang

Perovskite BaTiO3 thin films have a wide range of applications for advanced devices. Especially, epitaxial BaTiO3 thin films are highly desirable for these advanced applications. So far, such epitaxial BaTiO3 films have been successfully fabricated on different single-crystal substrates using various deposition techniques including RF magnetron sputtering, molecular beam epitaxy, metallorganic ...

2013
Mariya P. Aleksandrova Ivelina N. Cholakova Georgy K. Bodurov Georgy D. Kolev Georgy H. Dobrikov

Indium-tin oxide films are deposited by low plasma temperature RF sputtering on highly flexible modification of glycol polyethyleneterephtalate substrates. The produced layers are characterized with transparency over 82 % and sheet resistance of 86.9 Ω/square. The film’s conductivity was further improved by additional UV illumination from light source (365 nm), having power of 250 W. The influe...

2012
Min-Chul Jun Jung-Hyuk Koh

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thi...

2015
H. Mahdhi Z. Ben Ayadi

Thin zinc oxide doped with gallium layers were prepared by rf-magnetron sputtering from nanoparticles synthesized by sol-gel method. Increasing the deposition temperature has resulted in a change of preferred orientations of (002) with an intermediate step-like structure of powder. The films showed different morphologies of the surface of the grains that are dependent on the deposition temperat...

2002
L. W. Teo V. Ho M. S. Tay Y. Lei W. K. Choi W. K. Chim D. A. Antoniadis E. A. Fitzgerald

A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metalinsulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO2) layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO2 of varying thickness (3 6 nm) deposited using a radio frequency (rf) co-sputtering technique, and a cappi...

2017
Inseok Seo Steve W. Martin

In this study, amorphous lithium thio-germanate thin films were prepared by radio frequency (RF) sputtering deposition in Ar atmospheres. For the first time, new high quality lithium germanium sulfide nLi2S + GeS2 thin films, n = 1, 2, and 3, have been successfully made by RF sputtering and synthesized as new solid state electrolytes. Although these materials are unstable in air, the starting m...

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