نتایج جستجو برای: s sio2
تعداد نتایج: 724020 فیلتر نتایج به سال:
Occupational exposure to respirable crystalline silica has the ability to cause silicosis. Silica is also suspected of being associated with an increased risk of lung cancer, kidney disease, rheumatoid arthritis, and other diseases. The specific mechanism(s) of pathogenesis for silicosis and these other potential health concerns remains unclear. This investigation measured dissolution rates of ...
The aim of the present study was to investigate the abrasive effect of CaCO3 and SiO2-based fluoride-free experimental toothpastes on eroded human permanent dental enamel and evaluate the effectiveness of waiting periods between acid exposure and tooth brushing. Twelve volunteers wore palatal appliances containing human enamel blocks for two periods of five days each. The appliances were immers...
High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level...
Impurity-free disordering IFD of the InAs quantum dots QDs capped with either an InP layer or an InGaAs/ InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850 °C for 30 s. A large differential energy shift of 157 meV is induced by SiO2 in the QDs capped with an InGaAs/ InP bilayer. Contrary to the report...
We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950 C. The substrates were 0.2-mm thick steel foil coated with 0.5m thick SiO2. We employed silicon crystallization times ranging from 6 h (600 C) to 20 s (950 C). Thin-film transistors (TFTs) were made in either self-aligned or nonself-aligned geometries. The gate dielectric wa...
In this study, a microfibrous carrier consisting of 3vol% of 8 m (dia.) glass fibers is utilized to entrap 45 vol% of 150-250 m (dia.) SiO2 support particulates. ZnO is then nano-dispersed onto the support by impregnation at the loading of 17 wt%. At equivalent bed volumes, ZnO/SiO2 entrapped materials provide 2-fold longer breakthrough times for H2S (with a 67% reduction in sorbent loading) co...
In this work, the flatband voltage shift of SiO2 embedded with silicon nanocrystal (nc-Si) annealed at different annealing temperature, different annealing time and under different temperature ramping rates are being investigated. The Si-ions are implanted into the SiO2 with very low energy. The instability of the flatband voltage shift is due to fact that there are remaining Si ions in the SiO...
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack st...
Silicon carbide (SiC) has shown considerable potential for ultraviolet (UV) photode‐ tectors due to its properties such as wide band gap (3.26 eV for 4H-SiC), high break down electric field and high thermal stability. 4H-SiC-based UV photodetectors such as Schottky, metal-semiconductor-metal (MSM), metal-insulator-semiconductor (MIS) and avalanche have been presenting excellent performance for ...
The high carrier mobility of graphene makes it an attractive candidate for future electronic device applications.(1) In SiO2/Si-supported graphene devices, the mobility typically varies from 2000 to ∼2,0000 cm(2) V(-1) s(-1).(2) By removing SiO2,(3,4) much higher mobility (2 × 10(5) cm(2) V(-1) s(-1) in the latter) has been obtained, suggesting the importance of the Coulomb scattering in graphe...
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