In this paper, we report a new 4 H-silicon carbide (SiC) lateral dual sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using twodimensional (2-D) device simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of th...

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height i...

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

The three-dimensional propagation of electromagnetic waves in a distributed Schottky barrier transmission line is investigated. In one case, we show that the electromagnetic fields are similar to those that were originally obtained by Goubau and Schwering in their development of the beam waveguide. This case can lead to a very low-loss distributed Schottky barrier resonator.

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer leng...

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmissio...

Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer gr...

We construct spectral triples associated to Schottky–Mumford curves, in such a way that the local Euler factor can be recovered from the zeta functions of such spectral triples. We propose a way of extending this construction to the case where the curve is not k-split degenerate.

We generalize results about the classical Schottky groups to quasiconvex subgroups in negatively curved groups, answering a question of M. Bestvina.