Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focus here on Schottky barrier CNTFETs which operate by modulating the transmission coefficient of carriers through the Schottky barriers at the interf...

1. ABSTRACT. * A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike (< 2 nm) to take advantages of the strong Schottky image...

The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phospho...

In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin cu...

Motivation AlGaN/GaN HEMT rf transistors are rapidly developing due to their high output power density, high operation voltage and high input impedance. Ni-based gate metallization is widely used to form the Schottky gate contacts. However, temperature and electric field levels are higher in AlGaN/GaN compared to traditional III-Vs and therefore the diffusion of Ni into AlGaN/GaN constitutes a ...

The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojuncti...

2014 The Schottky magnetodiode is the combination of two basic phenomena : the magnetodiode effect in double-injecting P+ NN+ structures and the effect of the carrier density modulation on the Schottky reverse current. Our devices, realized in SOS technology, denote magnetosensitivities of about 10 V/T. We investigate the influence of the geometrical parameters, injection rate and doping level ...

In this work we have investigated the performance of Schottky photodetectors based on materials nonconventionally used to detect near-infrared wavelengths. In the proposed devices the absorption mechanism is based on the internal photoemission effect. Both three-dimensional (sputtered erbium and evaporated germanium) and two-dimensional materials (graphene) have been considered and their perfor...

We propose that in nanotube field effect transistors (FETs) with small effective dielectric thickness the vertical potential drop across the nanotube diameter at finite gate bias can lower or eliminate the Schottky barrier at the electrode. This effect is demonstrated in single-walled carbon nanotube FETs fabricated on top of ultra-high-κ dielectric constant SrTiO3/Si substrates. These FETs sho...