Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned...

We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determin...

Optical Measurement of Electron Spin Lifetimes in Gallium Arsenide Dallas Carl Smith Department of Physics and Astronomy Bachelor of Science We measured T1 spin lifetimes for electrons in gallium arsenide at various magnetic field strengths. To perform these measurements, we initialized and probed the spin states using optical techniques. By changing the delay between the initializing (pump) an...

The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...

rapidly, with many new achievements and records reported by research groups at the 2017 Symposium on VLSI Technology and Circuits in Kyoto, Japan (5–9 June). Most of the reported work involved indium gallium arsenide (InGaAs), particularly integrated with silicon (Si) substrates aiming for low-cost mass production. We report here on those sessions, along with research aimed at gallium nitride (...

1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...

This paper gives an overview of the materials and methods used for fabricating photovoltaic solar cell devices. The technologies discussed include those based on the use of silicon (in the crystalline, multicrystalline, amorphous and micro-crystalline forms), the IIIeV compounds (e.g. gallium arsenide, indium phosphide and gallium antimonide), the polycrystalline compounds (e.g. cadmium telluri...

Gallium Arsenide memories, which are now beginning to be used commercially, are subject to certain unusual parametric faults, not normally seen in silicon or other memory devices. This paper studies the behavior of Gallium Arsenide High Electron Mobility Transistor (HEMT) memories in the presence of material defects, processing errors and design errors to formulate efficient testing schemes. Al...