Absfrucf-A dynamic theory of semiconductor laser amplifiers is developed which takes into account the coherent time-dependent amplification of an incident optical pulse as well as the nonlinear dynamics of the semiconductor laser when driven by an unbiased injection current pulse. For suitable time delays between the optical and the electrical pulse, a strongly nonlinear self-induced shortening...

In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topol...

Novel ultrafast semiconductor lasers Ursula Keller ETH Zürich SESAM modelocked VECSELs and MIXSELs are attractive semiconductor laser sources that deliver ultrashort laser pulses with picosecond and femtosecond pulse durations in combination with watt-level average output power levels in the gigahertz repetition rate range. The excellent beam quality and low-noise performance makes them highly ...

in this paper, the effects of reflected waves of the facets on the internal optical intensity of semiconductor dfb lasers are investigated. the uniformity of optical intensity along the cavity length is evaluated with flatness parameter. the dependence of this parameter on coupling coefficient, reflectivity and grating phase at the facets is also studied. this investigation shows that in some s...

The spontaneous-emission factor in an unstable-resonator semiconductor laser is enhanced by more than 2 orders of magnitude compared with that of a Fabry-Perot semiconductor laser having the same volume. A clear linkage has been observed among the spontaneous-emission factor, the waveguiding property, and the width of the lasing spectral envelope.

We report on experimental evidence of generation and control of low spiking events in a semiconductor laser. An experiment has been carried on a semiconductor laser with an electro-optic feedback, set in a parameter range where chaos occurs. The feedback is modulated by 1 kHz and 10 kHz, frequencies, 50mV amplitudes. The dependence of the injected current on the feedback fraction is observed.