The development of strategies for addressing arrays of nanoscale devices is central to the implementation of integrated nanosystems such as biological sensor arrays and nanocomputers. We report a general approach for addressing based on molecular-level modification of crossed semiconductor nanowire field-effect transistor (cNW-FET) arrays, where selective chemical modification of cross points i...

Drift–diffusion model is applied for transport in a one–dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a long single–wall nanotube basing on a self–consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of w...

This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration p...

A theory of drift–diffusion transport in a low–dimensional field effect transistor is developed. Two cases of a semiconductor nanowire and a single–wall nanotube are considered using self-consistent electrostatics to obtain a general expression for transconductance. This quantum wire channel device description is shown to differ from classical device theory because of the specific nanowire char...

While animal experimentations have spearheaded numerous breakthroughs in biomedicine, they also have spawned many logistical concerns in providing toxicity screening for copious new materials. Their prioritization is premised on performing cellular-level screening in vitro. Among the screening assays, secretomic assay with high sensitivity, analytical throughput, and simplicity is of prime impo...

In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mech...