in this paper first we try to analysis the behavior ofthe soas in the optical networks and then have proposed anumerical simple model to simulate the behavior of thesemiconductor optical amplifiers. after that by employing thismodel as inline amplifier for a dwdm optical system, we havesimulated the transmission of 10 channels with bit rate 10 gb/sup to distance 3970 km with rz-dpsk modulation ...

Gain Clamped Semiconductor Optical Amplifier (GC-SOA), All Optical flip flop (AOff), Distributed bragg reflector (DBR), bistability property ABSTRACT In this article, the effect of coupling coefficient variations on an all optical Flip Flop performance based on gain clamped semiconductor optical amplifier according to distributed bragg reflectors by extensive band model of wave diffusion in tim...

We demonstrate simultaneous demultiplexing, data regeneration and clock recovery at 10Gbits/s, using a single semiconductor optical amplifier-based nonlinear-optical loop mirror in a phase-locked loop configuration.

Optical Amplifiers are essentials components in long haul fibre optic system. An amplifier is a electronic device that can increase the power of signal. An Optical Amplifier is effectively the opposite of attenuator while Optical Amplifiers provide gain and attenuator provides loss. When a signal travels in a optical fibre medium the signal suffer from various losses such as fibre losses, atten...

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compati...

In this thesis, we study all-optical processing techniques based on non-linear semiconductor optical amplifiers for the functionalities of second and third generation optical networks. In particular, devices for all-optical wavelength conversion with regenerative properties have been investigated. The configurations under investigation are based on the non-linear four-wave mixing process which ...

The characteristics of a semiconductor laser operating in the threshold region are investigated systematically. In this transition region from below to above threshold, the linewidth versus injection current characteristic is found to be nonmonotonic: a local minimum of linewidth just below threshold and a local maximum just above threshold are confirmed experimentally. If a semiconductor laser...