The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D→2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to ...

The coherent Hall effect denotes the transient Hall response of impulsively excited coherent charge-carrier wave packets in a solid. We report the first experimental study of this phenomenon (i) using a semiconductor superlattice in crossed electric and magnetic fields as a model for three-dimensional materials and (ii) employing a contactless optoelectronic technique to probe the transient cur...

A theoretical study of hole wave packets in a GaAs, Als,,Ga,,,As superlattice is presented. Formation of the wave packet by short laser pulse excitation and the time-dependent nature of the wave packet are discussed, with particular attention given to the quasi-periodic nature of the time dependence. Phenomena analogous to those displayed in atomic and molecular wave packet systems are predicte...

Bloch oscillation in electrically biased semiconductor superlattices offers broadband terahertz gain from DC up to the Bloch frequency and can provide a basis for solid-state electronic oscillators operating at 10 times the frequency of existing devices. To circumvent the inherent instability of the electrically biased doped superlattices to the formation of static or dynamic electric field dom...

Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of nonequilibrium Green’s functions. Velocity-field characteristics are calculated for nanowire superlattices of varying diameters, from the quantum dot superlattice regime to the quantum well superlattice regime. Scattering processes due to electron-phonon couplings, phonon ...

The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a fundamental limit to the continuation of transistor power scaling. In order to further reduce transistor power consumption and transistor footprint, new subthreshold transport mechanisms other than thermionic emission over an energy barrier are required. In this thesis, we devote our efforts towards the...

With recent advances in epitaxial crystal-growth techniques, it has become possible to grow the semiconductor superlattice systems composed of alternate layers of two different semiconductor materials. This leads the band edges to exhibit a periodic variation with the position along the direction of crystal growth, The most extensively studied superlattice is the one consisting of alternate lay...

Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot ...

A new method of refrigeration is proposed. Cooling is obtained by therm-ionic emission of electrons over periodic barriers in a multilayer geometry. These could be either Schottky barriers between metals and semiconductors or else barriers in a semiconductor superlattice. The same device is an efficient power generator. A complete theory is provided.