449 Abstract— We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low ...

Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...

This paper investigates the impact of quantum effects on the increase of short channel effects in III–V MOSFETs. First of all, contrary to the results obtained by other groups [1,2], quantum confinement has been found to play no role on the short channel effects occurring in the subthreshold regime. In this regime, the main origin of the increase of SCEs is simply due to the higher dielectric c...

background: patellar mal tracking is responsible for pain and disability in patellofemoral pain syndrome (pfps). patellar kinesio taping may have different effects on short and long term usage. the aim of this study is to compare the effect of short term and long term patellar kinesio taping in patellar position on women with patellofemoral pain syndrome using magnetic resonance imaging (mri). ...

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility ...

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