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The current–voltage characteristics of a Schottky diode are simulated numerically using the thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier heights, with a linear bias dependence of both the mean and standard deviation. The resulting data are analyzed to get insight into the effects of distribution parameters on the barrier height, activation energy pl...

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 ̋C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data wa...

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