Premise of the study: Photosynthetic orchids found in highly shaded forests are often mixotrophic, receiving part of their carbon energy via ectomycorrhizal fungi that had originally received carbohydrate from trees. A photosynthetic orchid, Cremastra appendiculata is also found under highly shaded forest, but our preliminary data suggested that its associated fungi were not ectomycorrhizal. We...

It is often assumed that similar behaviors in related species are produced by similar neural mechanisms. To test this, we examined the neuronal basis of a simple swimming behavior in two nudibranchs (Mollusca, Opisthobranchia), Melibe leonina and Dendronotus iris. The side-to-side swimming movements of Dendronotus [1] strongly resemble those of Melibe [2, 3]. In Melibe, it was previously shown ...

One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x = 0–1) with atomically flat surfaces and interf...

We study the finite-step realizability of the joint/generalized spectral radius of a pair of real d × d matrices {S1, S2}, one of which has rank 1, where 2 ≤ d < +∞. Let ρ(A) denote the spectral radius of a square matrix A. Then we prove that there always exists a finite-length word (i1, . . . , i ∗ l) ∈ {1, 2}, for some finite l ≥ 1, such that l √ ρ(Si1 · · ·Si∗l ) = sup n≥1 { max (i1,...,in)∈...

Optical intersubband transitions (ISTs) for both in-plane polarization (TE) and normalto-plane polarization (TM) in p-type Si1-xGex/Si multiple quantum wells (MQWs) are investigated using 14-band k⋅p model combined with the envelope-function Fourier expansion method. The results show that the amplitudes of different intersubband transitions for TE and TM polarizations, and the overall absorptio...

The growth of epitaxy of silicon–carbon (Si1−yCy) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si1−yCy alloy layers at growth rates of 18 nm min−1 and 13 nm min−1 for fully substitutional carbon levels of 1.8% and 2.1%, respectively,...

Wide band gap semiconductors doped by transition metals are attracting much attention in part because of possible ‘spintronics’ applications. Using pseudo-potential plane-wave calculations and density functional theory (DFT), we studied effects of doping Mn of various concentrations on the cubic silicon carbide structure (-SiC). Band structures and density of states (DOSs) were calculated for ...

Related Articles On calculation of thermal conductivity from Einstein relation in equilibrium molecular dynamics J. Chem. Phys. 137, 014106 (2012) Electron-dependent thermoelectric properties in Si/Si1-xGex heterostructures and Si1-xGex alloys from firstprinciples Appl. Phys. Lett. 100, 253901 (2012) Finite element calculations of the time dependent thermal fluxes in the laser-heated diamond an...

We show that a newly developed high temperature, ultra-low rate oxidation process can produce homogeneous, fully strained, defect-free and perfectly flat Silicon Germanium (Si1-xGex) On Insulator films when x ? 0.33. For larger Ge concentrations (x = 0.5), we evidence new mechanism of elastic strain relaxation taking place through the undulation Si1-xGex layer without nucleation dislocations. I...

A double Sagnac interferometer (DSI) and vernier effect sensor for relative humidity (RH) is proposed experimentally implemented, in which two single interferometers (SI1 SI2) cascaded parallel to construct the structure of sensor. Owing approximate free spectral range (FSR) SI1 SI2, can produce fundamental harmonic effect. Theoretical analysis shows that RH sensitivity only related lengths pol...