We investigated the ability of β-iron silicide (β-FeSi2) to serve as a hydrogen (H2)-evolution photocatalyst due to the potential of its conduction band bottom, which may allow thermodynamically favorable H2 evolution in spite of its small band-gap of 0.80 eV. β-FeSi2 had an apparent quantum efficiency for H2 evolution of ∼24% up to 950 nm (near infrared light), in the presence of the dithionic...

Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples a...

Soft x-ray fluorescence spectroscopy has been employed to obtain information about the Si-derived valence band states of Fe/Si multilayers. The valence band spectra are quite different for films with and without antiferromagnetic interlayer exchange coupling, demonstrating that these multilayers have different silicide phases in their spacer layers. Comparison with previously published fluoresc...

Source/drain (S/D) series resistance components and device/process parameters contributing to series resistance are extensively analyzed using advanced model for future CMOS design and technology scaling into the nanometer regime. The total series resistance of a device is found to be very sensitive to the variations of the sidewall thickness, the doping concentration in the deep junction regio...

Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively.  The annealing process of the structur...

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is...

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-facto...

Titanium silicide grows on silicon in a form of discontinuous layers, which is the most serious obstacle to the formation of high-quality epilayers for VLSI applications. At the same time, nanometric dimensions of the epitaxial silicide islands attract interest as quantum nanostructures. However, for this purpose, nanocrystals in a self-assembled array have to be defect-free, and exhibit high s...

Lowered-barrier-height silicide Schottky diodes are desirable for obtaining longer cutoff-wavelength Si-based infrared detectors. Silicide Schottky diodes have been fabricated by the reaction of evaporated Pt and Ir films on p-Si,-.Ge, alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. Internal photoemission measurements were ...

Highly anisotropic dry etching of tungsten silicide and tungsten polycides is required for the realization of submicron low resistance gates and interconnects for use in high performance complementary metal–oxide–semiconductor ~CMOS! and BiCMOS technologies. The current etch chemistries are not anisotropic, i.e., lateral etching of the tungsten silicide takes place which results in undesirable ...