Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given and a solution ...

An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solutio...

The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect transistor with block oxide (bFDSOI-FET) is proposed to investigate the influence of block oxide height (HBO) on the electrical characteristics. According to the two-dimensional (2-D) simulation results, the characteristics of the proposed structure are similar to those of the ultra-thin (UT) ...

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving part...

−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...

Low-loss rib waveguides on Silicon-on-Insulator are used to demonstrate ultra high-Q and finesse all-pass microring resonators with record finesse of 1100 and Q of 613000. Key words— Microring resonators, Silicon-on-Insulator (SOI)

Design optimization of the coupling region is conducted in order to solve the difficulty of achieving a higher quality factor (Q) for large size resonators based on silicon-on-insulator (SOI). Relations among coupling length, coupling ratio and quality factor of the optical cavities are theoretically analyzed. Resonators (R = 100 μm) with different coupling styles, concentric, straight, and but...