In this paper, a method is proposed for extraction of coupled networks from layout information for simulation of electrothermal device behavior. The networks represent a threedimensional (3-D) device structure with circuit elements. The electrical and thermal characteristics of this circuit representation are calculated with a circuit simulator. Spatial potential distributions, current flows, a...

A passive false twist unit (spiral) has been developed to assist with the handling lowstrength slivers on a high speed-spinning machine with a high-speed feed. In the first trial, a falsetwist simulator device was constructed to determine whether the passive false twist unit can be usedon high speed feeding with different can distance from the feeding device. In the second trial, theeffects of ...

This paper will provide information on the features of the new device simulator MINIMOS KT and demonstrate its efficiency in transient simulation of con~plex device structures. An example will indicate the feasibility of such simulations even on a workstation.

In this paper, we study the circuit performance issues of high-K gate dielectric MOSFETs using the Look-up Table (LUT) approach. The LUT approach is implemented in a public-domain circuit simulator SEQUEL. We observed an excellent match between LUT simulator and mixed mode simulations using MEDICI. This work clearly demonstrates the predictive power of the new simulator, as it enables evaluatio...

A new simulator was created to facilitate vertical circuit design integration. Written in Objective C, it readily allows the incorporation of new system/intermediate/device level models and modifications to the simulation algorithms. The analog simulation capability of the new simulator is demonstrated. A simulator model is presented and the new simulator’s implementation of that model is shown...

As device technologies improve, the traditional driftdiffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device...

Microelectromechanical Systems (MEMS), by their nature as sensors and actuators, require application specific packaging. The package is the near environment of the MEMS device and hence has a direct effect on its thermal behavior, on mechanical effects, and on environmental compatibility and contamination. Therefore, understanding the influence of the packaging on MEMS device performance is cri...

This papers describes a computer environment that supports the simultaneous electrical and thermal interactions at device and chip level. A circuit simulator and a finite element thermal simulator are coupled through an application program interface that synchronizes the transfer of information between two simulators. Temperature dependent thermal conductivity of silicon is taken into account b...