نتایج جستجو برای: single electron tunneling
تعداد نتایج: 1162844 فیلتر نتایج به سال:
We combine scanning-tunneling-spectroscopy experiments probing magnetic impurities on a superconducting surface with a theoretical analysis of the tunneling processes between (superconducting) tip and substrate. We show that the current through impurity-induced Shiba bound states is carried by single-electron tunneling at large tip-substrate distances and Andreev reflections at smaller distance...
We compare the numerical results for electron tunneling currents for single gate oxides, ON-and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and the modeling of electron transport in silicon.
In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. More in particular, we investigate the behavior of a modified version of the SET turnstile circuit and propose applying the circuit as a single electron encoded logic (SEEL) memory element. We analyze th...
We have studied the bound states of the extra electron in a molecular chain corresponding to the physical situation of the electron tunneling through the system. The bound-state spectrum is obtained using the formalism of the multiple scattering theory MST . The subbarrier scattering operators, the fundamental building blocks of MST, are evaluated within the variational asymptotic method which ...
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions – single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin tr...
An analysis of a ternary single electron tunneling phase logic element is presented. The analysis is based on Monte Carlo simulations and an analytical treatment of a resistively loaded tunneling junction at low temperatures. We show that tristable operation can be obtained over a 19% dc bias operating range by optimizing the pump frequency and amplitude. For large ac frequencies, our optimizat...
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