Introduction: Multi-throw switches are widely used in microwave circuits for switch matrices and true-time-delay phase shifting applications. Traditionally, the multi-throw switch uses GaAs MESFETs and pin diodes to perform its switching function. It exhibits good performances at low frequencies, but deteriorates in the high frequency range beyond 1 GHz [1]. On the other hand, the monolithic mi...

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt o...

Abstract To realize a better radio frequency (RF) communication system, the RF switch, as an important module, is used to cooperate with other devices form front end for optimizing performances. This paper designs single-pole multi-throw (SPMT) which exhibits low insertion loss of 0.57 dB at 1.9 GHz under voltage 2.2 4.7 V. The switch fabricated using 130 nm silicon-on-insulator (SOI) complemen...

A single pole double throw (SPDT) discrete switch design using switchable substrate integrated waveguide (SIW) resonators is proposed in this paper. It was designed for the millimeter wave multiple input output (MIMO) transceiver. An example application 5G communication 26 GHz band. High isolation between transmitter and receiver (in transceiver) needed SPDT to minimize any high radio frequency...

The front-end transmit/receive switch circuit is one of the essential elements in modern wireless handsets. The main function of the transmit/receive switch is switch the antenna either to the transmitter or the receiver. It must have high isolation in order to avoid the RF-power of the transmitter (PA) turning on the receiver (LNA), resulting in high loss or in the worst case damage. Low inser...

Presented is the performance of a highly integrated RF single-pole double-throw (SPDT) switch fabricated in a 0.18 μm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes ∼40 μA from a 3.4 V supply. The switch, based upon the 1.8 V thinoxide devices with resistive body-floating and unit cell layout optimisati...

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 10 12 cm -2 and an AlAs/GaAs spacer. Such were used fabricate monolithic integrated circuits single-pole double throw switches with gate length width 0.5 μm 100 μm, respectively. resulting had following parameters: g max =400 mS/mm, saturation curren...