نتایج جستجو برای: spontaneous nucleation

تعداد نتایج: 132664  

Journal: :Colloid and Polymer Science 2008
Klaus Tauer Hugo Hernandez Steffen Kozempel Olga Lazareva Pantea Nazaran

The application of atypical experimental methods such as conductivity measurements, optical microscopy, and nonstirred polymerizations to investigations of the 'classical' batch ab initio emulsion polymerization of styrene revealed astonishing facts. The most important result is the discovery of spontaneous emulsification leading to monomer droplets even in the quiescent styrene in water system...

2007
G. B. OLSON A. J. Bogers M. COHEN

The previous work of Professor W. G. Burgers and Dr. A. J. Bogers is used to develop a mechanism of strain-induced martensitic nucleation, involving two intersecting shear systems. We distinguish between strain-induced nucleation and stressassisted nucleation, the latter involving the same sites and embryos as does the regular spontaneous transformation. The strain-induced nucleation, on the ot...

1999
LAURA M. MACHESKY R. DYCHE MULLINS HENRY N. HIGGS DONALD A. KAISER LAURENT BLANCHOIN ROBIN C. MAY MARGARET E. HALL THOMAS D. POLLARD

The Arp2y3 complex, a stable assembly of two actin-related proteins (Arp2 and Arp3) with five other subunits, caps the pointed end of actin filaments and nucleates actin polymerization with low efficiency. WASp and Scar are two similar proteins that bind the p21 subunit of the Arp2y3 complex, but their effect on the nucleation activity of the complex was not known. We report that full-length, r...

Journal: :Philosophical transactions. Series A, Mathematical, physical, and engineering sciences 2017
T Chauve M Montagnat F Barou K Hidas A Tommasi D Mainprice

Nucleation mechanisms occurring during dynamic recrystallization play a crucial role in the evolution of microstructures and textures during high temperature deformation. In polycrystalline ice, the strong viscoplastic anisotropy induces high strain heterogeneities between grains which control the recrystallization mechanisms. Here, we study the nucleation mechanisms occurring during creep test...

Journal: :Physical review letters 2008
A M Lindenberg S Engemann K J Gaffney K Sokolowski-Tinten J Larsson P B Hillyard D A Reis D M Fritz J Arthur R A Akre M J George A Deb P H Bucksbaum J Hajdu D A Meyer M Nicoul C Blome Th Tschentscher A L Cavalieri R W Falcone S H Lee R Pahl J Rudati P H Fuoss A J Nelson P Krejcik D P Siddons P Lorazo J B Hastings

Femtosecond time-resolved small and wide angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Following intense optical excitation, a transient liquid state of high compressibility characterized by large-amplitude density fluctuations is observed and the buildup of these fluctu...

Journal: :Nanoscale 2015
Sophie Guillemin Eirini Sarigiannidou Estelle Appert Fabrice Donatini Gilles Renou Georges Bremond Vincent Consonni

ZnO nanowires are usually formed by physical and chemical deposition techniques following the bottom-up approach consisting in supplying the reactants on a nucleation surface heated at a given temperature. We demonstrate an original alternative approach for the formation of ZnO nanowire arrays with high structural and optical quality, which is based on the spontaneous transformation of a ZnO th...

Journal: :The journal of physical chemistry. B 2006
Hari Chandrasekaran Gamini U Sumanasekara Mahendra K Sunkara

In this paper, we provide a theoretical basis using thermodynamic stability analysis for explaining the spontaneous nucleation and growth of a high density of 1-D structures of a variety of materials from low-melting metals such as Ga, In, or Sn. The thermodynamic stability analysis provides a theoretical estimate of the extent of supersaturation of solute species in molten metal solvent. Using...

Journal: :Nanotechnology 2015
J K Zettler P Corfdir L Geelhaar H Riechert O Brandt S Fernández-Garrido

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires (NWs) on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN NW...

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