نتایج جستجو برای: sputtering

تعداد نتایج: 8003  

1999
G. Hayderer M. Schmid P. Varga H P. Winter F. Aumayr C. O. Reinhold

We have measured total sputtering yields for impact of slow (#100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from LiF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identif...

2003
E Salonen J Keinonen

The understanding of different features of the sputtering of materials lies in understanding the factors contributing to the emission of atoms from a regular crystal structure at the surface. Although the sputtering of fcc crystals has received much attention, the database on bcc materials is still scarce. We use molecular dynamics simulations to study the self-sputtering of the (100), (110), (...

2016
Muhammad Naveed Aleksei Obrosov Andrzej Zak Wlodzimierz Dudzinski Alex A. Volinsky Sabine Weiß

Coating growth and mechanical properties of nanolamellar Cr2AlC coatings at various sputtering power were investigated in the present study. Cr2AlC coating was deposited on the IN 718 superalloy and (100) Si wafers by DC magnetron sputtering at different sputtering powers. The structure and properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmis...

1995
B. T. DRAINE

Interstellar shock waves can erode and destroy grains present in the shocked gas, primarily as the result of sputtering and grain-grain collisions. Uncertainties in current estimates of sputtering yields are reviewed. Results are presented for the simple case of sputtering of fast grains being stopped in cold gas. An upper limit is derived for sputtering of refractory grains in C-type MHD shock...

Journal: :The Journal of chemical physics 2012
Daniel R Killelea K D Gibson Hanqiu Yuan James S Becker S J Sibener

The flow of energy from the impact site of a heavy, translationally energetic xenon atom on an ice surface leads to several non-equilibrium events. The central focus of this paper is on the collision-induced desorption (sputtering) of water molecules into the gas-phase from the ice surface. Sputtering is strongly activated with respect to xenon translational energy, and a threshold for desorpti...

2002
D. B. CHRISEY R. E. JOHNSON J. W. BORING

Measurements have been made of the sputtering yields, the mass spectra of ejected molecules, and ejection rates for various kiloelectronvolt ions incident on sodium sulfide (Na2S). The sputtering yields were small compared to those measured earlier for the more volatile sulfur ($8) and SO2 due to the strong ionic bonding in the solid. The mechanism of sputtering for the corotating sulfur and ox...

Journal: :journal of chemical health risks 0
seyed rahim kiahosseini department of materials engineering, science and research branch, islamic azad university, tehran, iran abdollah afshar department of materials engineering, sharif university of technology, tehran, iran majid mojtahedzadeh larijani agriculture medical and industrial research school, nuclear science and technology research institute (nstri), karaj, iran mardali yousefpour department of materials science and engineering, semnan university, semnan, iran

magnesium alloys as biodegradable materials can be used in body as an implant materials but since they have poor corrosion resistance, it is required to decrease their corrosion rate by biocompatible coatings. in this study, hydroxyapatite (ha) coatings in the presence of an intermediate layer of zrn as a biocompatible material, deposited on az91 magnesium alloy by ion beam sputtering method at...

2016
Yunpeng Li Qian Xin Lulu Du Yunxiu Qu He Li Xi Kong Qingpu Wang Aimin Song

An extremely sensitive dependence of the electronic properties of SnOx film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value ...

2016
Bin Peng Dongdong Gong Wanli Zhang Jianying Jiang Lin Shu Yahui Zhang

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the A...

2013
S. Shanmugan P. Anithambigai D. Mutharasu

AlN thin film was prepared over different metal substrates using DC sputtering at various sputtering parameters. The XRD spectra revealed the presence of mixed (cubic and hexagonal) phases for all samples other than samples prepared at 300W with Ar:N2 gas ratio of 14:6. The intensities of cubic phases observed at copper (Cu) substrates increased drastically with high sputtering power and N2 gas...

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