Nanoscale I-MOS devices were demonstrated by using a novel device structure. They showed a normal transistor operation with subthreshold swing less than 12.2 mV/dec at room temperature. We also investigated some critical issues were also discussed in device design such as the junction depth of the source extension region and the substrate doping concentration.

The effect of a halo doping on SCE in PiFET is investigated. The reduction of the separation between two PiOX layers (LPiOX) followed by a local agglomeration of halo doing region makes the reverse short channel effect efficiently suppressed. As the LPiOX decreases, the subthreshold swing decreases, and the DIBL increases. The final optimized condition is LPiOX =0.7× Lg~1.0× Lg.

The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a fundamental limit to the continuation of transistor power scaling. In order to further reduce transistor power consumption and transistor footprint, new subthreshold transport mechanisms other than thermionic emission over an energy barrier are required. In this thesis, we devote our efforts towards the...

An analytical 2D model of subthreshold current (I DSsub), subthreshold swing (S sub), and threshold voltage (V TH) roll-off with a variation of channel doping concentration (N A) for symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the channel potential is obtained by solving the 2D Poisson's equation with the help of the evanesce...

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing fluence and number pulses, TFT was evaluated terms mobility, threshold voltage, on/off current ratio subthreshold swing, all which were derived from transfer output characteristics. The 500 pulses-irradiated exhibited an enhanced mobility 3 cm2/V-s...

Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...

Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of Ge/ZrO /TaN capacitors is proposed to be originated from oxygen vacancy dipoles. NC effect amorphous HfO 2 and films devices proved by sudde...