the growth rate and uniformity of carbon nano tubes (cnts) based on chemical vapor deposition (cvd) technique is investigated by using a numerical model. in this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal cvd reactor at atmospheric pressure. based on the gas phase and surface reactions, released carbon...

nanometric carbid silicon (sic) supported monometallic and bimetallic catalysts containing fe, co, ni transition metals were prepared by wet impregnation method. multiwall carbon nanotubes (mwcnts) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°c by thermal chemical vapor deposition (tcvd) technique. the synthesized nanomaterials (catalysts and cnt...

The lack of complete understanding of the substrate effects on carbon nanotubes (CNTs) growth poses a lot oftechnical challenges. Here, we report the direct growth of nanostructures such as the CNTs on stainless steel 304and brass substrates using thermal chemical vapor deposition (TCVD) process with C2H2 gas as carbon sourceand hydrogen as supporting gas mixed in Ar gas flow. We used an especi...

in this research, graphene was synthesized by chemical vapor deposition (cvd) method in atmosphere pressure (14.7 psi). different functionalization method was used for oxidizing of graphene such as acid and alkaline treatments. the functionalized graphene (fg) was characterized by ftir and raman spectroscopy. nanofluid with water and different concentration (0.05, 0.15 and 0.25 wt %) of fg were...

Nanometric Carbid Silicon (SiC) supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD) technique. The synthesized nanomaterials (catalysts and CNT...

A special type of iterative learning control (ILC) problem is considered. Due to the insu$cient measurement capability in many real control problems such as Rapid Thermal Processing (RTP), it may happen that only the terminal output tracking error instead of the whole output trajectory tracking error is available. In the RTP chemical vapor deposition (CVD) of wafer fab. industry, the ultimate c...

Temperature measurement and control are two difficult problems in the rapid thermal processing (RTP) system. For many applications such as rapid thermal processing chemical vapor deposition (RTCVD) [1] and rapid thermal oxidation (RTO) [2], large changes in wafer emissivity can occur during film growing, leading to erroneous temperature measurements with a single wavelength pyrometer. The error...