Since the introduction of engine-driven nickel-titanium (NiTi) instruments, attempts have been made to minimize or eliminate their inherent defects, increase their surface hardness/flexibility and also improve their resistance to cyclic fatigue and cutting efficiency. The various strategies of enhancing instrument surface include ion implantation, thermal nitridation, cryogenic treatment and el...

Bulk (Mo2N) and supported molybdenum nitride (Mo2N/TiO2, Mo2N/CeO2) were synthesized by reduction-nitridation of bulk MoO3 under a mixture N2/H2. We investigated the mechanism formation nitrides coupling elemental analysis, in situ ex XRD, Raman spectroscopy, XPS/UPS spectroscopy DFT calculation. showed that it is possible to control crystallographic phase degree nitridation (i.e. nitrogen vaca...

Near-net shape forming of metallic components from metallic powders produced in situ from reduction of corresponding pure metal oxides has not been explored to a large extent. Such a process can be probably termed in short as the “Reduction-Sintering” process. This methodology can be especially effective in producing components containing refractory metals. Additionally, in situ production of m...

The vapor-liquid-solid (VLS) growth model has been widely used to direct the growth of one-dimensional (1D) nanomaterials, but the origin of the proposed process has not been experimentally confirmed. Here we report the experimental evidence of the origin of VLS growth. Al(69)Ni(31) alloyed particles are used as "catalysts" for growing AlN nanowires by nitridation reaction in N(2)-NH(3) at diff...

The effect of the initial nitridation of the sapphire substrate on the GaN crystal quality as a function of substrate temperature was studied. GaN layers were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates nitridated at different substrate temperatures. A strong improvement in the GaN crystal quality was observed at 100 °C nitridation temperature. Symmetric (0004) ...

Monoclinic Ta3N5 thin films were synthesized by thermal nitridation of amorphous Ta2O5 films directly sputtered by radio frequency magnetron sputtering. The samples were studied by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, UV-Vis-NIR spectrophotometry, rietveld refinements, spectroscopic ellipsometry and electrochemical techniques. The surface compositi...

Zinc-gallium oxynitride powders (ZnGaON) were synthesized by nitridation of ZnGa2O4 oxide precursor obtained by polymeric precursors (PP) and solid state reaction (SSR) methods and the influence of the synthesis route of ZnGa2O4 on the final compound ZnGaON was investigated. Crystalline single phase ZnGa2O4 was obtained at 1100 oC / 12 h by SSR and at 600 oC / 2 h by PP with different grain siz...

The present work addresses the interaction between Si and ZrO which may occur during the nitridation stage of silicon and can affect t8e final reaction products. Using the thermoanalytical methods combined with Xray diffractometry it has been shown that the Si, parallel to the nitride formation, disproportionates in the presence of Zr02 forming ZrSi04 and ZrSi2-x according to 2Zr02 + (3-x)Si > ...