We present a numerical and experimental study of a guided-mode-resonance (GMR) device for detecting surface-bound light-absorbing thin films. The GMR device functions as an optical resonator at the wavelength strongly absorbed by the thin film. The GMR mode produces an evanescent field that results in enhanced optical absorption by the thin film. For a 100-nm-thick lossy thin film, the GMR devi...

A thermoelectric thin-film device consisting of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs was prepared on a glass substrate by using co-evaporation and annealing process. The Seebeck coefficient and the power factor of the co-evaporated Bi2Te3 film were 130μV/K and 0.7 © 1014W/K2·m, respectively, and became substantially improved to 1160μV/K and 16 © 1014W/K2·m by annealing at 400°C for 20...

We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the ...

Seebeck coefficient is one of the key parameters to evaluate the performance of thermoelectric coolers. However, it is very difficult to directly measure Seebeck coefficient perpendicular to thin film devices because of the difficulty of creating a temperature gradient and measuring localized temperature and voltage change simultaneously. In this paper, a novel method is described and it is use...

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance ...

In this paper, we discuss the construction of a small apparatus less than 3cm large to characterize the thermoelectric properties of a small thermoelectric sample that can be easily used in cryogenic environments. The device was then used to measure the thermal conductivity of silicon and the Seebeck coefficient of thin film bismuth telluride. Thin film bismuth telluride has become of particula...

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type ca...

In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were cha...

In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical properties of the atomically thin-film are influenced by the interaction between the thin-film and the substrate. In this article, utilizing monolayer MoS(2) on LaAlO(3) and SrTiO(3) substrates, as well as SiO2 and Gel-film as reference substrates similar to previously reported work [Nano Res, 2014, 7, 561],...

Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-OTe defect complex. A similar peak, ...