In recent years, the concept of Internet-of-Things (IoT) has attracted significant interests. Required by the applications, the IoT power optimization has become the key concern, which relies on innovations from all levels of device, circuits, and architectures. Meanwhile, the energy efficiency of existing IoT implementations based on the CMOS technology is fundamentally limited by the device p...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

The variability induced by the work-function variation (WFV) in p-type ultra-scaled nanowire tunnel FET (TFET) has been studied using Non-Equilibrium Green's Function module implemented University of Glasgow quantum transport simulator called NESS. To provide a thorough insight into influence WFV, we have simulated 250 atomistically different TFETs and obtained results are compared to MOSFETs f...

A highly sensitive, accurate, fast and power efficient biosensor is the need of hour. Undoubtedly, dielectrically modulated (DM) tunnel FET (TFET) assures better sensitivity as compared to MOSFET biosensors in case label-free biosensing. However, there exists immense possibilities upgrade TFET properties through improvement its DC characteristics. Therefore, this paper a ferroelectric (FE) gate...

We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure ...