نتایج جستجو برای: type i heterostructure
تعداد نتایج: 2221275 فیلتر نتایج به سال:
0031-9007= We propose and investigate the properties of a digital ferromagnetic heterostructure consisting of a -doped layer of Mn in Si, using ab initio electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half-metallic system. The metallic behavior is contr...
Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at ...
Engineered lattices in condensed matter physics, such as cold-atom optical lattices or photonic crystals, can have properties that are fundamentally different from those of naturally occurring electronic crystals. We report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each ...
A novel ZnO/reduced graphene oxide (RGO)/CdS heterostructure was successfully synthesized via a facile three-step solution method. RGO serves as an interlayer between ZnO nanowires and CdS quantum dots (QDs), which provides a high speed charge transfer channel, leading to an enhanced charge separation efficiency. Under UV light irradiation, the photocatalytic activity of the ZnO/RGO/CdS heteros...
it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...
The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si hetero...
Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelect...
Van de Waals heterostructure (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by recent discovery MoSi 2 N 4 -a synthetic septuple-layered 2D semiconductor with exceptional mechanical and properties, we investigate synergy wide-bandgap (WBG) monolayers GaN ZnO using first-principle calculations. We find that /GaN a direct b...
Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a ...
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