Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...

Baseband front-end amplifiers operating from DC to several GHz are required from high speed optical transmission systems. Classical direct-coupled baseband transimpedance amplifiers have high gain but their high frequency performance is limited by the parasitic capacitances of the transistors. Their upper frequency limit is empirically known to achieve only a 30% of the transition frequency (fT...

Hydrogen is a key product of rumen fermentation and has been suggested to thermodynamically control the production of the various volatile fatty acids (VFA). Previous studies, however, have not accounted for the fact that only thermodynamic near-equilibrium conditions control the magnitude of reaction rate. Furthermore, the role of NAD, which is affected by hydrogen partial pressure (PH2), has ...

in this paper, a low voltage and low power (lv/lp) operational transconductance amplifier (ota) using fgmos (floating-gate mos) transistor is proposed. the relative tuning range of 50 is achieved in this ota while only consumes 40 µw with 1.0 v supply voltage in tsmc 0.18 µm cmos technology. the simulation results of the proposed ota show an open loop gain of 30.2 db and a unity gain frequency ...

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity...

Opamp gain: The main difficulty in building a very high frequency opamp-RC filter is achieving sufficient opamp gain at the filter comer frequency. With the transfer function used here, 34 dB opamp gain results in 1 dB peaking and 30 dB opamp gain results in 2 dB peaking at the comer frequency. (This includes overcoming a 2 dB reduction in loop gain due to capacitance at the opamp input.) A con...

A high gain, high frequency single stage CMOS op amp is designed and simulated. The authors used gain boosting technique and common mode feedback circuitry on a differential input/ouput 0.5μm CMOS amplifier. Results comprehend a DC gain of 110 dB, a unity-gain frequency superior to 300MHz associated with a phase margin in the range of 60 degrees. Good insensivity to temperature, voltage rail le...

The research has been carried out to integrate MOSFETs and bipolar transistors on SOI substrate for high performance mixed signal applications [1]. Jin Cai, et al [2] analyzed npn SiGe HBT on SOI substrate. The characteristics of SiGe HBT on SOI over temperature range of 27 to 330 degC are reported in [3]. The performance of SiGe HBT on bulk is reported in extreme environment (-230 to 120 degC)...

Current conveyors are unity gain analog building block having high linearity, wide dynamic range and provide higher gain-bandwidth product. The current conveyors operate at low voltage supplies and consume less power. It has high input impedance, low output impedance and unity current gain (Iz/Ix=±1) as well as unity voltage gain (Vx/Vy=1). The working principle of Current Conveyors is very sim...