We presented the results of electrical and optical studies of the properties of InxGa1−xN epitaxial layers (0.060 ≤ x ≤ 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison betwee...

BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection similar to the incr...

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free gr...

polycyclic aromatic hydrocarbons (pahs) are toxic pollutants released by various urban combustion sources. tehran is the largest city in iran with a population of about 8 million and it is faced with serious air quality problems. the gas phase samples collected from 21 sites in tehran area throughout year 2005. the samples‘ pahs were collected using a skc trapping consisting of glass cartridg...

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te p...

We report an investigation into the formation of crystallographic voids during metalorganic vapour phase epitaxial regrowth GaAs photonic crystal structures. employ a combination cross-sectional scanning electron microscopy and transmission to study structures regrown with AlAs, AlGaAs GaAs. The change in material allows effect adatom diffusion kinetics on void structure be assessed. Whilst com...

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for...